Polycrystalline SiGe junctions for advanced devices

ABSTRACT

A structure and method of fabrication for MOSFET devices with a polycrystalline SiGe junction is disclosed. Ge is selectively grown on Si while Si is selectively grown on Ge. Alternating depositions of Ge and Si layers yield the SiGe junction. The deposited layers are doped, and subsequently the dopants outdiffused into the device body. A thin porous oxide layer between the polycrystalline Ge and Si layers enhances the isotropy of the SiGe junctions.

FIELD OF THE INVENTION

The present invention relates to the field of integrated circuits andmethods of their manufacturing. More particularly, the present inventionrelates to advanced field effect semiconductor devices that are in needof shallow, highly conductive junctions.

BACKGROUND OF THE INVENTION

Today's integrated circuits include a vast number of devices. Smallerdevices are key to enhance performance and to improve reliability. AsMOSFET (Metal Oxide Semiconductor Field-Effect-Transistor, a name withhistoric connotations meaning in general an insulated gateField-Effect-Transistor) devices are being scaled down, the technologybecomes more complex. There is great difficulty in maintainingperformance improvements for devices of deeply submicron generations.Many avenues are being explored for keeping device performanceimprovements on track. Along the path of seeking ever higher deviceperformance, downscaling of the MOSFET devices is the establishedguiding principle.

Downscaling dimensions naturally leads to shallower and lower dopeddevice (source and drain) junctions, thereby increasing the parasiticresistance of the device. This happens at a time when performancedictates exactly the opposite, namely the reduction of parasiticresistance of junctions, especially that of the source junction.Spreading resistance, junction extension edge resistance, contactresistance at silicon and metal silicide interfaces, are all componentsof the parasitic resistance of junctions. To reduce these resistances,abrupt dopant profiles and high electrical activation are required, allthe while maintaining the shallow junction profiles.

Usual techniques of the art for obtaining shallow junctions involve theimplantation of the necessary dopants, such as boron (B), arsenic (As),phosphorous (P), and others, in a high dosage and at ultra-low energies,followed by a spike—Rapid Thermal Annealing (spike—RTA ) to activatethese dopants. However, the high thermal energy of spike—RTA annealingresults in high defect generation in junctions, resulting in fastdopants diffusion through defects. As a consequence, the junctions areno longer shallow and also become electrically leaky.

SUMMARY OF THE INVENTION

In view of the problems discussed above, this invention discloses amethod for forming a device junction with high conductivity, low contactresistance, shallow profile, and sharp edge. This disclosurecontemplates of replacing the traditional source/drain junctionmaterial, which is the single crystal device body material, with apolycrystalline material. The dopant in the polycrystalline materialachieves fast diffusion through the grain boundaries, and with properannealing condition the dopant also forms a sharp profile in the channelregion and the device body in general.

Accordingly, this invention teaches a MOSFET device structure having ajunction containing polycrystalline silicon-germanium (SiGe). Theinvention also teaches the method for fabricating such a polycrystallineSiGe containing junction. The value of the SiGe polycrystalline junctionrests on two basic concepts. First, the fast dopant diffusion alonggrain boundaries. Second, the higher dopant solid solubility in Gerelative to that of Si.

The fabrication method is preferably based on the chemical vapordeposition. (CVD) process. For achieving preferred results and for thesimplicity of the fabrication process, the polycrystalline junctionshave to be grown, or deposited, in a selective manner. However,polycrystalline Si, or polycrystalline Si alloys, are not selective todielectrics. To obtain selectivity against any dielectric, first Genano-crystals, or seeds, which are selective to dielectrics are beinggrown on the preferred Si regions. Then, after the polycrystalline Gehas been grown on preferred Si regions, one can switch to Si depositionwhere Si nuclei grow preferentially faster on the Ge seeds than on Sibecause the Ge—H bonds are weaker than Si—H bonds. Si nuclei also willnot grow on dielectrics as fast as on the Ge seeds since on dielectricsSi has a longer nucleation time. After depositing a thin layer ofpolycrystalline Si one switches back to Ge. These steps are thenrepeated: alternatingly growing Ge nuclei and Si nuclei, whereby thetechnique achieves SiGe polycrystalline growth in a selective manner.

The invention further provides a method for forming a highly isotropicpolycrystalline phase of SiGe alloy by having a noncontinuous porousoxide, typically in the range of 0.2 nm thickness, grown in the initialstage of the successive Si poly depositions. This porous oxide helps theSi crystal grains to be misoriented relative the Ge seeds.

There have been several attempts to achieve similar results in the priorart. For instance, U. S. Pat. Nos. 5,818,100 and 5,646,073 to Griderteach a method for selectively forming polycrystalline Si over singlecrystal Si, but they do not teach the present invention. In U.S. Pat.No. 5,571,744 to Demirlioglu, a method is disclosed to diffuse dopantsinto junctions from polycrystalline SiGe, but this patent does not teachthe present invention.

BRIEF DESCRIPTION OF THE DRAWINGS

These and other features of the present invention will become apparentfrom the accompanying detailed description and drawings, wherein:

FIG. 1 shows a schematic cross sectional view of a MOSFET device withpolycrystalline SiGe junctions; and

FIG. 2 shows a schematic cross sectional view of the order in which thepolycrystalline layers are deposited.

DETAILED DESCRIPTION OF THE INVENTION

FIG. 1 shows a schematic cross sectional view of a MOSFET device withpolycrystalline SiGe junctions. The MOSFET device is hosted in a Sibased material 110. In microelectronics technology the material that hasprogressed the farthest in miniaturization is Si. Silicon basedmaterials are various alloys of Si in the same basic technologicalcontent as Si. One such Si based material of importance formicroelectronics is the single crystal silicon-germanium alloy. In thecontext of this invention the term Si based material, if Ge is thealloying material, refers to compounds with less than about 50% of Ge.The term of hosting a device means that the critical part of the device,that which is mainly sensitive to carrier properties, such as thechannel 102 of a MOSFET, is residing in the hosting material. Typically,the material 110 hosting the MOSFET device is essentially Si.

FIG. 1 shows the MOSFET device at two stages of fabrication. In FIG. 1Aa preparatory stage is shown, while FIG. 1B shows the device with thedisclosed steps already executed, where the junctions 101 are made up ofpolycrystalline SiGe, or more specifically, of alternating layers ofpolycrystalline Ge 10 and polycrystalline Si 11.

Processing of the MOSFET follows fabrication methods known in the art upto, and following the steps of this disclosure. FIG. 1A shows the resultof such known fabrication methods with the exception of the junctions101. The present invention deviates from the known art of deviceprocessing in the step of removing a volume of the Si based material 110at the location of the junction 101, in effect leaving a void in thebody 110. Such a removal of body material 110 from the junction site 101can be done with any of the known methods in the art for materialremoval, such as reactive ion etching (RIE). In FIG. 1 the source andthe drain are not distinguished from one another, consequently a singleindicator number, 101, is being used for both junction locations. Thedotted line 135 indicates the surface plane of the device where the gateinsulator 130 interfaces with the channel 102. This plane 135 is theusual natural plane of the top of the body material 110. FIG. 1Aschematically indicates further standard parts of a MOSFET device. Theseare the gate 120, and an isolation structure 210, well known in the art,which isolates devices from one another. Typically the gate 120 at thisstage of the fabrication, is surrounded by an insulator 121. Thisinsulator 121 may be made of a single material, or it can be made ofmore than one material. For instance, it may not consist of the samematerial on the sides of the gate and on the top of the gate, and italso may have been produced at different stages of the fabricationprocess. What kind of insulator surrounds the gate, or even if a gate ispresent at this stage of the fabrication process is not significant fromthe invention's point of view. What matters is that at this stage offabrication, as shown on FIG. 1A, the only place where a Si basedmaterial is exposed is in the junction 101, where the single crystal Sibased material 110 is exposed after the removal of the Si based materialfrom the junctions. In FIG. 1A the device fabrication progressed to thepoint of having produced a so called first surface. This first surfaceis such that it has at least one first region where the Si based singlecrystal is exposed. This first region is the exposed surface of thehollow junction. In an exemplary embodiment the Si based material 110 isessentially Si.

FIG. 2 shows a schematic cross sectional view of the order in which thepolycrystalline layers are being deposited. First, a polycrystalline Ge10 is deposited over a Si based single crystal material 110 by CVD,using germanate (GeH₄) as precursor. During such a CVD process Ge willnot deposit, or deposit at a much slower rate over an insulator incomparison to the rate at which it deposits onto Si. For instance, forthe case of an SiO₂ insulator layer the following successive reactionsmay take place: Ge+SiO₂→GeO₂+Si; and GeO₂+Ge→2GeO: the Ge will not stayover an oxide surface because GeO sublimates when the temperature isover about 700° C. Alternatively, the CVD precursor in the Ge depositionmay be GeH₂Cl₂, or it can be an admixture of GeH₄ and GeH₂Cl₂. Also theGe precursor may be part of a gas mixture, which gas mixture may alsocontain HCl, since HCl promotes selectivity. In a an exemplaryembodiment the polycrystalline Ge deposition typically lasts for a fewseconds.

The CVD deposition of polycrystalline Ge over the first surface, whichfirst surface is such that it has a single crystal Si based materialexposed first region, will yield a polycrystalline Ge layer 10 over thisfirst region. The crystal grain sizes of the polycrystalline Ge 10 rangein diameter from about 1.5 nm to 15 nm. The thickness of thepolycrystalline Ge 10 layer is typically between about 2 nm and 15 nm.The described CVD Ge deposition process yields Ge deposition overexposed Si based material regions, irrespective whether such regions areof a single crystal or essentially of a polycrystalline material.

The process of selective polycrystalline Ge 10 formation over the singlecrystal Si based material 110, as shown in FIG. 2, and in the junctionvoid of FIG. 1B, yields a second surface. The difference between thefirst surface and the second surface is that now the first region isoccupied by the polycrystalline Ge 10, instead of the exposed singlecrystal Si based material 110.

Polycrystalline Si 11 can now be deposited by CVD over the secondsurface, since Si preferentially forms over the first region of exposedpolycrystalline Ge. The polycrystalline Si 11 is deposited by CVD usingsilene (SiH₄) as precursor. In this process Si will not deposit, ordeposit at a much slower rate, over insulators in comparison to the rateat which it deposits onto Ge. Alternatively, the CVD precursor in the Sideposition may be SiH₂Cl₂, or it can be an admixture of SiH₄ andSiH₂Cl₂. Also the Si precursor may be part of a gas mixture, which gasmixture may also contain HCl, since HCl promotes selectivity. In a anexemplary embodiment the temperature of the CVD process during the Sideposition is about between 600° C. and 750° C., with the Si depositionlasting for about 20 to 60 seconds.

The CVD deposition of Si over the second surface, which second surfaceis such that it has an exposed polycrystalline Ge first region, willyield an polycrystalline Si layer 11 over this first region. Thediameter of the crystal grain sizes of the polycrystalline Si 11 rangefrom about 1.5 nm to 15 nm. The thickness of the polycrystalline Si 11layer is typically between about 2 nm and 15 nm. The described CVD Sideposition process yields selective Si deposition over exposed Geregions, irrespective whether such regions are of a single crystalmaterial or essentially of a polycrystalline material.

The process of selective polycrystalline Si 11 formation over thepolycrystalline Ge 10 layer, as shown in FIG. 2 and in the junction voidof FIG. 1B, yields a third surface. The difference between the secondsurface and the third surface is that now the first region is occupiedby the polycrystalline Si 11, instead of the polycrystalline Ge 10.

The deposition of polycrystalline Ge over Si, and the deposition ofpolycrystalline Si over Ge has been experimentally confirmed using anAtomic Force Microscopy (AFM) in a technique known by the art.

In building up a SiGe polycrystalline layer of the desired thickness oneis repeating the steps of the Si deposition onto the second surface andthe Ge deposition onto the third surface, as many times as needed. Thethin alternating layers of polycrystalline Ge 10 and Si 11 give thedesired junction properties for MOSFET device fabrication, such as highconductivity and high dopant diffusion.

During the process of alternating between Ge and Si deposition, in a anexemplary embodiment one can also deposit a thin porous oxygencontaining layer 20 in the initial period of the Si layer growth. Thisthin porous oxide layer 20 serves to additionally misorient the Sicrystal grains relative to the Ge crystal grains. In this manner theresulting SiGe layer becomes more isotropic, which has advantages forboth the conductivity and the dopant diffusion properties of thejunction.

The deposition of the porous oxygen containing layer 20 is accomplishedby adding an oxygen carrying gas, for instance simply O₂, to the Siprecursor, possibly mixed with HCl, in the initial stages of the Sideposition step. The porous oxide layer 20 has typically a thickness ofonly between about 0.1 nm and 1 nm. In FIGS. 1B and 2 this porous oxidelayer 20 is shown with crisscrossing lines, indicating porousness andthinness.

FIG. 1B shows the MOSFET device after the steps of the present inventionhave been carried out, and it has a novel junction structure involvingpolycrystalline SiGe. Following the state of device processing which isschematically shown in FIG. 1A, the void 101 left after the Si basedmaterial removal is filled with alternating layers of polycrystalline Ge10 and polycrystalline Si 11. The first Ge layer 10 is the oneinterfacing with the Si based material body 110. As FIG. 1B indicates,the selectively deposited layers likely cover the exposed surfacesconformally. In an exemplary embodiment, before the Si layer 11 isdeposited it is preceded by the selective deposition of a porous oxygencontaining layer 20. These successive steps of the disclosed method havebeen verified using scanning electron microscopy (SEM), in a techniqueknown by the art.

In an exemplary embodiment the Ge 10 and the Si 11 layers are beingdoped during deposition with a technique called in situ doping, which isknown in the art. In a typical application when the fabricated MOSFET isa PMOS, the in situ dopant is boron (B). After having finished the SiGejunction formation, the dopant is made to diffuse 50 into the Si basedbody material 110. This outdiffusion is indicated in FIG. 1B with theshort arrows 50. Conditions for this outdiffusion step in an exemplaryembodiment are: approximately 1000° C. for 1 sec of RTA. With the rapiddiffusion of the dopant out of the polycrystalline SiGe and into thebody material one obtains the desired shallow high conductivityjunctions. In an exemplary embodiment both the source and the drainjunctions are fabricated in the described manner. However, if onedesires, the invention can be applied to only one junction, for instanceto the source junction. The figures showing both source and drainjunctions made of SiGe polycrystalline material should not beinterpreted restrictively.

The height to which the voids are filled with polycrystalline SiGedepends on the specific needs of the embodiment as applied to anyparticular device structure. In an exemplary embodiment thepolycrystalline SiGe may rise above the natural surface plane of thedevice 135, possibly facilitating subsequent fabricating steps known inthe art, such as the self-aligned-silicidation of the junctions.

Many modifications and variations of the present invention are possiblein light of the above teachings, and could be apparent for those skilledin the art. The scope of the invention is defined by the appendedclaims.

1. A method for forming polycrystalline Si, comprising the steps of:providing a surface, wherein said surface comprises at least one regionof Ge; and subjecting said surface to a Si deposition, wherein saidpolycrystalline Si forms on said at least one region of Ge.
 2. Themethod of claim 1, wherein said Si deposition is done by chemical vapordeposition using a Si precursor.
 3. The method of claim 2, wherein saidSi precursor is selected from the group consisting of SiH₄, SiH₂Cl₂, andadmixtures thereof.
 4. The method of claim 2, wherein said Si precursoris part of a gas mixture, wherein said gas mixture further comprisesHCl.
 5. The method of claim 1, further comprising the step of depositinga porous oxide layer on said at least one region of Ge.
 6. The method ofclaim 5, wherein the step of depositing said porous oxide layer is doneby chemical vapor deposition comprising of a Si precursor and an oxygencarrying gas.
 7. The method of claim 6, wherein the step of depositingsaid porous oxide layer further comprises the step of adding HCl to saidSi precursor and said oxygen carrying gas.
 8. The method of claim 5,wherein said porous oxide layer is deposited to a thickness of betweenabout 0.1 nm and 1 nm.
 9. The method of claim 1, wherein saidpolycrystalline Si is having crystals with a diameter in the range fromabout 1.5 nm to 15 nm.
 10. The method of claim 1, wherein saidpolycrystalline Si is deposited to a thickness of between about 2 nm to15 nm.
 11. A method for forming a polycrystalline SiGe layer, comprisingthe steps of: providing a surface, wherein said surface comprises atleast one first region, wherein polycrystalline Si is occupying said atleast one first region; subjecting said surface to a Ge deposition,wherein a polycrystalline Ge layer forms on said polycrystalline Siyielding said polycrystalline SiGe layer on said at least one firstregion.
 12. The method of claim 11, wherein said Ge deposition is doneby chemical vapor deposition using a Ge precursor.
 13. The method ofclaim 12, wherein said Ge precursor is selected from the groupconsisting of GeH₄, GeH₂Cl₂, and admixtures thereof.
 14. The method ofclaim 12, wherein said Ge precursor is part of a gas mixture, whereinsaid gas mixture further comprises HCl.
 15. The method of claim 11,wherein said polycrystalline Ge is having crystals with a diameter inthe range from about 1.5 nm to 15 nm.
 16. The method of claim 11,wherein said polycrystalline Ge is deposited to a thickness of betweenabout 2 nm to 15 nm.
 17. A method for forming a polycrystalline SiGelayer over a Si based single crystal, comprising the steps of: providinga first surface, wherein said first surface comprises at least one firstregion, wherein said Si based single crystal is occupying said at leastone first region; subjecting said first surface to a Ge deposition,wherein a polycrystalline Ge layer forms on said Si based single crystalyielding a second surface, wherein said second surface comprises said atleast one first region, wherein said polycrystalline Ge is occupyingsaid first region; and subjecting said second surface to a Sideposition, wherein a polycrystalline Si layer forms on saidpolycrystalline Ge layer yielding a third surface, wherein said thirdsurface comprises said at least one first region, wherein saidpolycrystalline Si is occupying said first region yielding saidpolycrystalline SiGe layer over said at least one first region.
 18. Themethod of claim 17, wherein said Si based single crystal is chosen to beessentially a Si single crystal.
 19. The method of claim 17, furthercomprising the step of depositing a porous oxide layer on saidpolycrystalline Ge layer.
 20. The method of claim 17, wherein saidpolycrystalline Ge layer is formed to a thickness of between about 2 nmto 15 nm, and said polycrystalline Si layer is formed to a thickness ofbetween about 2 nm to 15 nm
 21. The method of claim 20, furthercomprising the step of: subjecting said third surface to a Gedeposition, wherein a polycrystalline Ge layer forms on said at leastone first region occupied by said polycrystalline Si yielding saidsecond surface.
 22. The method of claim 21, further comprising the stepof: repeating said Si deposition on said second surface and said Gedeposition on said third surface as many times as needed to reach thedesired thickness of said polycrystalline SiGe layer.
 23. A method forforming a junction for a MOSFET device in a Si based material,comprising the steps of: removing a volume of said Si based material atthe site of said junction; and filling said volume with a SiGepolycrystalline material.
 24. The method of claim 23, further comprisingthe step of: diffusing dopants from said SiGe polycrystalline materialinto said Si based material.
 25. The method of claim 24, wherein saiddopant is selected to be boron (B).
 26. The method of claim 23, whereinthe step of filling is executed by deposition of alternatingpolycrystalline layers of Ge and Si.
 27. The method of claim 26, whereinsaid deposition is done by chemical vapor deposition.
 28. The method ofclaim 27, wherein said polycrystalline layers of Ge and Si are in situdoped during said deposition.
 29. The method of claim 26, wherein thestep of filling further comprises the step of depositing a porous oxidelayer on said polycrystalline Ge layer.
 30. The method of claim 26,wherein each of said polycrystalline Ge layer is having crystals with adiameter in the range from about 1.5 nm to 15 nm.
 31. The method ofclaim 26, wherein each of said polycrystalline Ge layer is deposited toa thickness of between about 2 nm to 15 nm.
 32. The method of claim 26,wherein each of said polycrystalline Si layer is having crystals with adiameter in the range from about 1.5 nm to 15 nm.
 33. The method ofclaim 26, wherein each of said polycrystalline Si layer is deposited toa thickness of between about 2 nm to 15 nm.
 34. The method of claim 23,wherein said Si based material is chosen to be essentially a Simaterial.
 35. A MOSFET device in a Si based material, comprising: atleast one junction comprising a SiGe polycrystalline material.
 36. Thedevice of claim 35, wherein both source and drain junctions comprisesaid SiGe polycrystalline material.
 37. The device of claim 35, whereinat least a portion of said SiGe polycrystalline material is locatedbelow a surface plane of the device.
 38. The device of claim 35, whereinsaid Si based material is essentially Si.